Part Number Hot Search : 
TLP331 2SD1277 5CAPC SST4119A 2SC44 MAX9724A 74408 31M16
Product Description
Full Text Search
 

To Download MMBTA42 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 UNISONIC TECHNOLOGIES CO.,LTD. MMBTA42
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch.
1 3
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
*Collector-Emitter voltage: VCEO=300V *High current gain *Power Dissipation: PD (max) =350mW
2
SOT-23
MARKING
* Pb-free plating product number: MMBTA42L
PIN CONFIGURATION
1D
www..com
PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector
ORDERING INFORMATION Order Number Normal Lead free MMBTA42-AE3-R MMBTA42L-AE3-R Package SOT-23 Packing Tape Reel
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co.,LTD.
1
QW-R206-004.B
MMBTA42
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PD TJ TSTG
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
RATINGS 300 300 6 500 350 +150 -40 ~ +150 UNIT V V V mA mW C C
ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Collector Base Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) ICBO IEBO hFE fT Ccb TEST CONDITIONS Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A, Ic=0 Ic=20mA, IB=2mA Ic=20mA, IB=2mA VCB=200V, IE=0 VBE=6V, Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN 300 300 6 TYP MAX UNIT V V V V V nA nA
0.2 0.90 100 100 80 80 80 50 300
3
MHz pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-004.B
MMBTA42
TYPICAL CHARACTERISTICS
DC Current Gain 10 DC Current Gain , HFE
3
NPN EPITAXIAL SILICON TRANSISTOR
Saturation Voltage 10
1
VCE =10V VCE (s at), VBE (s at ) (V)
Ic =10xI B
102
10 0
VBE (sat)
101
10-1 VCE (sat)
10 0 10
0
10-2 10
1
10
2
10
-1
10
0
10
1
102
10
3
Collector Current, Ic (mA)
Collector Current Ic (mA) ,
Capacitance Current Gain Bandwidth Product (MHz) 102 IE =0 f=1MHz 10
3
Current Gain Bandwidth Product VCE=20V
10
1
10
2
-1 10
10
0
10
1
10
2
101 10 0
101 Collector Current Ic (mA) ,
102
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-004.B


▲Up To Search▲   

 
Price & Availability of MMBTA42

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X